central semiconductor corp. tm process CP618 small signal transistor pnp - silicon rf transistor chip princip al device types cm5583 process epitaxial planar die size 21.7 x 21.7 mils die thickness 9.0 mils base bonding pad area 3.5 mils diameter emitter bonding pad area 3.5 x 3.5 mils top side metalization al - 30,000? back side metalization au - 10,000? process details 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com geometry backside collector r2 (1-august 2002) gross die per 4 inch w afer 23,990
central semiconductor corp. tm process CP618 typical electrical characteristics 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com r2 (1-august 2002)
|
